Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
545836 | Microelectronics Reliability | 2008 | 5 Pages |
Abstract
Electrostatic discharges are a permanent threaten for integrated metal–insulator–metal capacitors. Hence, the development of comprehensive models able to predict the capacitors robustness against ESD aggression is of major importance to adopt the adequate protection strategies. This work focuses more particularly on the failure mechanisms of TaON capacitors submitted to HBM ESD waves. From leakage current characterization to thermal dissipation effects, we propose a complete reliability model which accurately foresees not only ESD failure voltage, but also TDDB capacitors lifetime.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
M. Verchiani, E. Bouyssou, G. Fiannaca, F. Cantin, C. Anceau, P. Ranson,