Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
545853 | Microelectronics Reliability | 2008 | 6 Pages |
Abstract
Multi-junction solar cells, as other semiconductor devices, suffer degradation of their electrical and physical properties under particle irradiation (electrons and protons) in space environment. In this paper we present an analytical model in order to make predictions of multi-junction solar cells (GaInP/GaAs/Ge) degradation in space environment.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
A. Gauffier, J.-P. David, O. Gilard,