| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 545906 | Microelectronics Reliability | 2008 | 6 Pages |
Abstract
A threshold condition different from the classical one is proposed for MOSFET with quantum effects, and is based on self-consistent numerical solution of the Schrödinger’s and Poisson’s equations. Furthermore, an accurate 1D threshold-voltage model including polysilicon-depletion effects is built by experimental fitting. Simulated results exhibit good agreement with measurement data. Based on this 1D model, a 2D quantum-modified threshold-voltage model for small MOSFET is developed by solving the quasi-2D Poisson’s equation and taking short-channel effects and quantum-mechanical effects into consideration. The model can also be used for deep-submicron MOSFET with high-k gate-dielectric and reasonable design of device parameters.
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Authors
J.P. Xu, Y.P. Li, P.T. Lai, W.B. Chen, S.G. Xu, J.G. Guan,