Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
545927 | Microelectronics Journal | 2013 | 8 Pages |
Abstract
Statistical compact modeling (SCM) is necessary for variability aware design at nanometer regime. An extensive study has been carried out to evaluate the impact of the statistical parameter set selection on the statistical accuracy of two widely used industry standard compact models: BSIM4 and PSP. Different statistical parameter generation strategies have been employed to examine the impact of different statistical parameter selection on both device and circuit simulation accuracy.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Negin Moezi, Daryoosh Dideban, Binjie Cheng, Scott Roy, Asen Asenov,