Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
545963 | Microelectronics Reliability | 2007 | 5 Pages |
Abstract
In this work, charge trapping in SiO2/Al2O3 dielectric stacks is characterized by means of pulsed capacitance–voltage measurements. The proposed technique strongly reduces the measurement time and, as a consequence, the impact of charge trapping on the measurement results. Flat band voltage shift and fast current transient during short stress pulses are systematically monitored and the centroid and the amount of the trapped charge are extracted using a first-order model.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Giuseppina Puzzilli, Bogdan Govoreanu, Fernanda Irrera, Maarten Rosmeulen, Jan Van Houdt,