Article ID Journal Published Year Pages File Type
545963 Microelectronics Reliability 2007 5 Pages PDF
Abstract

In this work, charge trapping in SiO2/Al2O3 dielectric stacks is characterized by means of pulsed capacitance–voltage measurements. The proposed technique strongly reduces the measurement time and, as a consequence, the impact of charge trapping on the measurement results. Flat band voltage shift and fast current transient during short stress pulses are systematically monitored and the centroid and the amount of the trapped charge are extracted using a first-order model.

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Physical Sciences and Engineering Computer Science Hardware and Architecture
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