Article ID Journal Published Year Pages File Type
545976 Microelectronics Reliability 2007 6 Pages PDF
Abstract

We have investigated gate and drain current noise on strained-channel n-MOSFETs with a SiGe virtual substrate and a 12 Å thermally nitrided gate oxide using low frequency noise measurements. The power spectral densities (PSD) of the flat-band voltage fluctuations are extracted from both gate and drain current noise. We show that the same oxide trap density profile is involved in drain and gate low frequency noise. A comparison with standard n-MOSFET transistors with the same gate stack process is presented. The flat-band voltage PSD concept is also used to compare both technologies to show that bulk and dielectric quality of strained devices are not degraded with regard to standard n-MOSFETs.

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Physical Sciences and Engineering Computer Science Hardware and Architecture
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