Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
545978 | Microelectronics Reliability | 2007 | 4 Pages |
Abstract
This paper discusses the low-frequency (LF) noise in submicron nMOSFETs under controlled transistor aging by hot-carrier stress. Both traditional, steady-state LF noise as well as the LF noise under periodic large-signal excitation were found to increase upon device degradation, for both hydrogen passivated and deuterium passivated Si–SiO2 interfaces. As hot-carrier degradation is slower in deuterium-annealed MOSFETs, so is the increase of the noise in these devices. The noise-suppressing effect of periodic OFF switching is gradually lost during hot-carrier degradation, as the LF noise under periodic large-signal excitation increases more rapidly than the LF noise in steady-state.
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Physical Sciences and Engineering
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Authors
Cora Salm, Eric Hoekstra, Jay S. Kolhatkar, André J. Hof, Hans Wallinga, Jurriaan Schmitz,