| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 545982 | Microelectronics Reliability | 2007 | 4 Pages |
Abstract
Aim of this work is to investigate the conduction characteristics of different high-K dielectrics deposited by ALD technique. A novel methodology which allows the evaluation of very low leakage current at least two-orders lower than standard I–V characteristics with a reduced 3-masks process flow has been used. A comparison with standard ONO technology is performed and shows that the Al2O3 layer is the most promising candidate for ONO replacement. Different techniques for depositing this layer have been compared investigating the impact of subsequent thermal treatments, which greatly improve Al2O3 performances.
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Authors
A. Sebastiani, R. Piagge, A. Modelli, G. Ghidini,