Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
545985 | Microelectronics Reliability | 2007 | 5 Pages |
Abstract
Gate stress measurements are applied to Flash cell array structures. The counter intuitive Vt shift is associated to the charge redistribution in the ONO layer. This redistribution of charge follows Poole–Frenkel conduction mechanisms. In multi-level Flash, the total charge in the nitride layer need to be minimized, and well-controlled, in order to achieve good data retention of the device.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Guoqiao Tao, Cedric Ouvrard, Helene Chauveau, Som Nath,