Article ID Journal Published Year Pages File Type
545985 Microelectronics Reliability 2007 5 Pages PDF
Abstract

Gate stress measurements are applied to Flash cell array structures. The counter intuitive Vt shift is associated to the charge redistribution in the ONO layer. This redistribution of charge follows Poole–Frenkel conduction mechanisms. In multi-level Flash, the total charge in the nitride layer need to be minimized, and well-controlled, in order to achieve good data retention of the device.

Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
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