Article ID Journal Published Year Pages File Type
545990 Microelectronics Reliability 2007 4 Pages PDF
Abstract

A specific time-resolved dynamic current measurement procedure is used to characterize high-field electron tunnel injection to the drain of EEPROMs. This allows the direct observation of a transient regime eventually occurring in the case of moderately doped drain. Another peculiarity is also evidenced, namely a stationary regime where measured current is far higher than anticipated by simulation. This is attributed to a non-equilibrium charge versus band-bending in the drain which is controlled by electron–hole pairs subsequent to impact ionization of electrons tunnelling from the gate.

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Physical Sciences and Engineering Computer Science Hardware and Architecture
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