Quantitative oxide charge determination by photocurrent analysis

A new method is presented for the quantitative determination of insulator charges QIs from photo induced diffusion currents. QIs is determined by analyzing the interface recombination of charge carriers in illuminated electrolyte/insulator/semiconductor structures. Measured characteristics are explained theoretically and an evaluation procedure is developed for the determination of QIs which is based on the comparison of the simulated with the experimental data. QIs values obtained from the proposed method are compared with those from capacitance voltage measurements. A very good agreement can be observed between the results of both methods.