Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
546001 | Microelectronics Reliability | 2007 | 4 Pages |
Abstract
The paper pursues an investigation of the errors associated with the extraction of the dielectric constant (i.e., κ value) from capacitance–voltage measurements on metal oxide semiconductor capacitors. The existence of a transition layer between the high-κ dielectric and the silicon substrate is a factor that affects – in general – the assessment of the electrical data, as well as the extraction of κ. A methodology which accounts for this transition layer and the errors related to other parameters involved in the κ value extraction is presented; moreover, we apply this methodology to experimental CV results on HfO2/SiOx/Si structures produced in different conditions.
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Authors
O. Buiu, S. Hall, O. Engstrom, B. Raeissi, M. Lemme, P.K. Hurley, K. Cherkaoui,