Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
546006 | Microelectronics Reliability | 2007 | 4 Pages |
Abstract
New applications in microelectronics need the integration of high capacitance devices. One way of this development is the integration of capacitors with 3D architecture such as trench fields. The challenge is then to deposit the dielectric material in a highly conformal way within trenches showing high aspects ratios. We have studied and modeled the conformality and the loading effect of Ta2O5 deposited by MOCVD in an analytical way.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
L. Pinzelli, M. Gros-Jean, Y. Bréchet, F. Volpi, A. Bajolet, J.-C. Giraudin,