Article ID Journal Published Year Pages File Type
546006 Microelectronics Reliability 2007 4 Pages PDF
Abstract

New applications in microelectronics need the integration of high capacitance devices. One way of this development is the integration of capacitors with 3D architecture such as trench fields. The challenge is then to deposit the dielectric material in a highly conformal way within trenches showing high aspects ratios. We have studied and modeled the conformality and the loading effect of Ta2O5 deposited by MOCVD in an analytical way.

Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Authors
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