Article ID Journal Published Year Pages File Type
546015 Microelectronics Reliability 2007 4 Pages PDF
Abstract

Most of the integrated circuit industry follows a final passivation process which consists of a low temperature passivation layer deposition and a thermal anneal. This two step process is particularly relevant in CMOS imagers where the dark current is a major issue. This work shows that passivation material plays an important role in the device performance. We measured H diffusion through the final silicon nitride layer and we compare these results with the material properties and passivation efficiency.

Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
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