| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 546019 | Microelectronics Reliability | 2007 | 4 Pages |
Abstract
Bi2Mg2/3Nb4/3O7 (BMN) pyrochlore films deposited on Cu/Si substrates at low temperatures are characterized for structural and dielectric properties as a function of oxygen flow rate. BMN films deposited at 150 °C were partially crystallized with nano-sized crystallines of approximately 8.7 nm. The dielectric properties of films are independent on variation of an oxygen flow rate, but the lowest leakage current densities observed in the range between 10 and 30 sccm(standard cc/min). BMN films (50 nm-thick) deposited at 100 °C and an oxygen flow rate of 30 sccm show a capacitance density of 570 nF/cm2 and a breakdown voltage of 3 V.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Jong-Hyun Park, Cheng-Ji Xian, Nak-Jin Seong, Soon-Gil Yoon, Seung-Hyun Son, Hyung-Mi Chung, Jin-Suck Moon, Hyun-Joo Jin, Seung-Eun Lee, Jeong-Won Lee, Hyung-Dong Kang, Yeoul-Kyo Chung, Yong-Soo Oh,