| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 546021 | Microelectronics Reliability | 2007 | 5 Pages |
Abstract
The impact of electron irradiation on ultra-low K (ULK) porous dielectric material used in advanced interconnects is analyzed using spectroscopic and electrical characterizations. The e-beam irradiation modifies the chemical composition, the porosity and the optical indexes. The effects of e-beam curing on electrical properties and dielectric reliability are also evaluated.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
C. Guedj, G. Imbert, E. Martinez, C. Licitra, N. Rochat, V. Arnal,