Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
546027 | Microelectronics Reliability | 2007 | 4 Pages |
Abstract
We investigate electrical properties of Ni/Al2O3/GaN metal–oxide–semiconductor (MOS) structures having different pre-treatment of GaN surface by O2, Ar and NH3, combined with various temperature of annealing. MOS and reference Ni/GaN Schottky contact are characterized using current–voltage and capacitance–voltage methods. MOS structures compared with the Schottky contact ones show leakage current reduction for all types of processing, from 3 to 5 orders of magnitude in reverse direct. We observed substantial influence of the pre-treatment on electrical parameters of MOS structures.
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Authors
K. Čičo, J. Kuzmík, D. Gregušová, R. Stoklas, T. Lalinský, A. Georgakilas, D. Pogany, K. Fröhlich,