| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 546030 | Microelectronics Reliability | 2007 | 4 Pages |
Abstract
The effects of thermal and intrinsic stress produced on SOI substrates by the field oxidation have been studied. Results of electrical and structural characterization obtained on SOI have been compared with standard bulk Si and a different structure has been adopted in order to reduce the induced stress.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
S. Privitera, R. Modica, V. Cerantonio, G. Fallica, G. Pappalardo,