Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
546094 | Microelectronics Reliability | 2006 | 11 Pages |
Abstract
The vertical coupling of active InP based ring resonators and passive feeding waveguides necessitates the use of a waferbonding technology in the fabrication process. The required bond material (BCB) has a low thermal conductivity and will strongly influence the operating temperature and thus the performance of the ring resonator through its insulating effect. A comprehensive thermal analysis of a proposed vertically coupled ring resonator of 50 μm outer radius is undertaken during the design phase to determine the thermal impact of: the design of the wafer bond, the design of the passivation layer and the optical power levels. Thermal abatement strategies for semiconductor lasers are presented.
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Authors
A.S. Fleischer, U. Troppenz, M. Hamacher, W. John,