| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 546139 | Microelectronics Reliability | 2008 | 6 Pages |
Abstract
In this paper, an analytical expression of the gate-dielectric fringing-potential distribution is derived for high-k gate-dielectric MOSFET through a conformal-mapping transformation method for the first time. Based on the fringing-potential distribution, the threshold-voltage model of the MOSFET is improved, and the influence of sidewall spacer on the threshold voltage is discussed in detail. Calculated results indicate that low-k sidewall spacer can alleviate the fringing-field effect.
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Authors
J.P. Xu, F. Ji, P.T. Lai, J.G. Guan,