| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 546209 | Microelectronics Reliability | 2006 | 6 Pages |
Abstract
Various optical defect localization techniques are applied on the same integrated circuits (IC). These circuits were previously stressed by Electro Static Discharges (ESD) to create defects. The results obtained by each technique were analyzed to determine the nature of the defects. The different data are compared to assess their sensitivity and to evaluate the contribution of each technique in a failure analysis flow.
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