Fault diagnosis technology based on transistor behavior analysis for physical analysis

The novel method has been developed to detect accuracy fault elements in transistor level circuit, analyzing the characteristics of circuit operation influenced on leakage fault and being combined with diagnosis software, based on switching level simulation. This method is based on behavior of CMOS transistor to which applied unstable voltage produced by leakage fault. Unsettled logic brings the transistor’s operation point to saturation area with multi-impedance value and forms penetration current nets passing through it. Output value on the net is calculated with each element impedance value and miss-logic signal is spread to output terminal. An evaluation of this technology corroborates to be precise method by using the circuit in which embedded arbitrary fault portions.