| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 546217 | Microelectronics Reliability | 2006 | 4 Pages |
Abstract
In this work, the influence of gate oxide reliability on N channel FinFET and MOSFET characteristics has been preliminary compared. For similar oxide damage, the results show that the oxide wear out has larger effects on the functionality of the FinFET than on the MOSFET.
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