| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 546218 | Microelectronics Reliability | 2006 | 5 Pages |
Abstract
Sub-nanosecond pulses were used to stress gate capacitors and the post-breakdown leakage resistance is analyzed. Post-breakdown leakage resistance obtained using sub-nanosecond pulse stress and ramp voltage stress are compared, and a power-law relationship between the inverse of the post-breakdown leakage resistance and device area is observed.
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