Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs

Deuterated oxides exhibit prolonged hot carrier lifetimes at room temperature. We report evidence that this improved hot carrier hardness exists over the temperature range between −25 °C and 200 °C. However, the benefit of deuterium incorporation deceases with increasing stress temperature. Furthermore the VT-shift shows a remarkable absence of temperature dependence for the deuterated samples. The results are compared to the existing vibration-relaxation model.