| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 546223 | Microelectronics Reliability | 2006 | 5 Pages |
Abstract
A new methodology that combines the Finite Element Modeling (FEM), statistical methodology (Rank Limit method & Expectation and Maximization algorithm) and experiments to shorten electromigration (EM) testing time without changing the physical mechanism of the EM is developed. It is found that increasing testing temperature to 250 °C is able to shorten the average testing time by more than 80%. Verification using Transmission Electron Microscope (TEM) analysis shows that the physical mechanism is indeed remained unchanged.
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