Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs

The impact of hot-carrier degradation on drain current (ID) hysteresis and switch-off ID transients of thin gate oxide floating body PD SOI nMOSFETs is analyzed. An extended characterization of these floating body effects (FBEs) is carried out for a wide range of transistor geometries and bias conditions. The results show a link between the hot-carrier-induced damage of the front channel and the reduction of the FBEs. This is further supported by unbiased thermal annealing experiments, which are found to give rise to a partial recovery of the hot-carrier induced damage and FBEs.