| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 546234 | Microelectronics Reliability | 2006 | 5 Pages |
The dielectric charging is one of the major failures reducing the reliability of capacitive switches with electrostatic actuation. Then the control of the charging/discharging processes is a key factor to allow a fast recovering of the dielectric after charging. From transient current measurements on MIM capacitors it is possible to select the best material for RF-MEMS.We have studied different PECVD silicon nitride obtained under low (380 KHz), high (13.56 MHz) or mixed (380kHz/13.56MHz) frequency power supply. The conduction mechanism into the dielectrics has been deduced from current measurements on MIM capacitors. Then the film properties have been studied by infrared measurement in order to identify the chemical bond into the dielectric which can explain the charging behaviour. It was observed that low hydrogen content in the films is in good correlation with electrical quality and kinetic of the charging/discharging processes.
