| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 546237 | Microelectronics Reliability | 2006 | 5 Pages |
Abstract
We have step-irradiated Al-free laser diodes with 1 MeV electrons at fluences from 1014 up to 1016 electrons/cm2. We measure at each step their L-I and I-V characteristics to evaluate the impact of irradiation on optical and electrical properties. We also irradiated a test structure incorporating 3 GaInAsP quantum wells and a thick GaInP cladding. Quantum wells photoluminescence measurements show a strong degradation of its intensity. However laser diodes properties remain essentially unchanged, due to a strong forward bias annealing effect.
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