| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 546260 | Microelectronics Reliability | 2006 | 4 Pages |
Abstract
The hot carrier effects on the 0.25 μm high voltage LDMOS has been examined by the accelerated stress experiment. Although the model parameters changed slightly, the switching performances degraded significantly, which have been simulated with the compact models extracted from the test devices by ICCAP. A full bridge DC-DC converter with the compact models was proposed in Cadence SpectreRF. The simulated results show that the efficiency of the full bridge DC-DC converter degraded significantly due to the hot carrier effects.
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