Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
546263 | Microelectronics Reliability | 2006 | 4 Pages |
Abstract
In this paper we present an experimental study of the gate damage exhibited by commercial n-channel power MOSFETs during ion exposure. The investigation has been performed in different bias conditions showing a strongly non linear relationship between the bias voltages at which the gate damage occurred. In addition, the gate damage observed at VGS = 0V is quite dissimilar from what observed at negative gate-source voltages. In facts, at low gate-source voltage bias the gate damage mechanism progressively appears like a cumulative effect, while at higher voltage bias an abrupt gate damage reveals a typical single event effect.
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