| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 546316 | Microelectronics Journal | 2011 | 6 Pages |
Abstract
The impact of sample-to-sample variability on total ionizing dose (TID) response within-wafer for a 180-nm CMOS technology has been studied. Large variations in leakage current and threshold voltage shift after irradiation are observed. These variations are mainly contributed to the process variability. The process steps which cause TID response variation are preliminarily discussed.
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Hardware and Architecture
Authors
Zhiyuan Hu, Zhangli Liu, Hua Shao, Zhengxuan Zhang, Bingxu Ning, Ming Chen, Dawei Bi, Shichang Zou,