Impurity states in a spherical GaAs–Ga1-x1-x AlxxAs quantum dots: Effects of hydrostatic pressure

We calculated the binding energies of shallow donors and acceptors in a spherical GaAs–Ga1-x1-xAlxxAs quantum dot under isotropic hydrostatic pressure for both a finite and an infinitely high barrier. We use a variational approach within the effective mass approximation. The binding energy is computed as a function of hydrostatic pressure, the dot sizes and the impurity position. The results show that the impurity binding energy increases with the pressure for any position of the impurity. We have also found that the binding energy depends on the location of the impurity and the pressure effects are less pronounced for impurities on the edge.