| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 546527 | Microelectronics Journal | 2008 | 4 Pages |
Abstract
Using a variational procedure in the effective-mass and parabolic-band approximations we investigate the effects of in-plane magnetic fields on the exciton states in single GaAs/Ga1-xAlxAsGaAs/Ga1-xAlxAs quantum wells. Exciton properties are analyzed by using a simple hydrogen-like variational envelope wave-function. Present theoretical results are compared with available experimental measurements on the diamagnetic shift of the photoluminescence peak position of GaAs/Ga0.7Al0.3AsGaAs/Ga0.7Al0.3As quantum wells under in-plane magnetic fields [Phys. Rev. B 71 (2005) 045303].
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Authors
C.A. Duque, M. de Dios-Leyva, L.E. Oliveira,