| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 546531 | Microelectronics Journal | 2008 | 4 Pages |
Abstract
A study of the miniband structure formation for parabolic GaAs/AlxGa1-xAsGaAs/AlxGa1-xAs superlattices within the spin-dependent sp3s*sp3s* tight-binding method is presented. A detailed analysis of the miniband formation is given and the importance of all system parameters is discussed. The transition from finite to infinite superlattices is considered and the dependence of the equidistant miniband separation on the superlattice size is revealed. A comparison with different theoretical methods and experimental data is presented.
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Authors
I. Rodriguez-Vargas, O.Y. Sánchez-Barbosa, D.A. Contreras-Solorio, S.J. Vlaev,