Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
546533 | Microelectronics Journal | 2008 | 4 Pages |
Abstract
We have used a variational procedure within the envelope-function and parabolic-band approximations to investigate the effects of hydrostatic pressure and crossed electric and magnetic fields on shallow-donor states in GaAs/Ga1-xAlxAsGaAs/Ga1-xAlxAs quantum wells. The donor variational envelope wave function is obtained through a hydrogenic 1s-like wave function and an expansion in a complete set of trigonometrical functions, and a detailed study is performed of the dependence of the donor binding energies on the applied hydrostatic pressure and applied in-growth direction electric and in-plane magnetic fields.
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Authors
E. Tangarife, S.Y. López, M. de Dios-Leyva, L.E. Oliveira, C.A. Duque,