Influence of the hydrostatic pressure onto the electronic and transport properties of n-type double δδ-doped GaAs quantum wells

We present a Thomas–Fermi-based envelope function calculation of the electronic structure for n-type double δδ-doped GaAs quantum wells under the influence of applied hydrostatic pressure. An empirical formula for the electron mobility is used to qualitatively describe some transport properties in the system. The optimal interwell distance and hydrostatic pressure for which the mobility would be a maximum are obtained, particularly in the high density limit (above 1013cm-2). This could be of interest for the design and fabrication of high power, high speed electronics.