| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 546549 | Microelectronics Journal | 2008 | 5 Pages |
Abstract
Paper presents results of the non-destructive characterization of porous SiC (PSiC) layers using atomic force microscope, Raman scattering, scanning electronic and X-ray diffraction spectroscopes. A comparative study of the Raman spectroscopy on the PSiC layers prepared at the different technological routine with the variation of the nanocrystallite sizes and the thickness of PSiC layers has shown a number of new features specific for nanocrystallite materials. The latter stimulates the modification of Raman scattering spectra, which have been discussed.
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Authors
M.M. Rodriguez, J.M. Rivas, A.D. Cano, T.V. Torchynska, J.P. Gomez, G.G. Gasga, S.J. Sandoval, M. Mynbaeva,