| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 546551 | Microelectronics Journal | 2008 | 5 Pages |
The preparation method and characterization data are described for porous SiC layers grown on the surface of porous silicon (P-Si) wires. Raman scattering spectroscopy, energy dispersive spectroscopy (EDS) and atomic force microscopy (AFM) were employed for the characterization. It is shown that in the first approximation, the wire structure of the porous SiC repeats the surface morphology of the porous Si. Some peculiarities of P-SiC surface structure were also observed whose connection with the P-Si surface is not yet clarified. The study of the Raman spectra has permitted to determine the crystalline structure (polytypes) for the SiC layers and shown a feature specific for nano-crystallite materials, which has been analyzed and discussed.
