| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 546553 | Microelectronics Journal | 2008 | 5 Pages |
Abstract
Free-standing SiOx films were prepared by molecular beam deposition following back side Silicon (Si) wafer etching in tetramethyl ammonium hydroxide (TMAH) solution. Transmission Electron Microscopy confirms the presence of Si nanocrystals in the as-prepared film. Raman spectroscopy show that deep structural film reorganization appears during high temperature laser treatment. The laser annealing decreases photoluminescence from the films.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
S. Novikov, J. Sinkkonen, T. Nikitin, L. Khriachtchev, M. Räsänen, E. Haimi,