Article ID Journal Published Year Pages File Type
546585 Microelectronics Journal 2008 4 Pages PDF
Abstract

An integrated 1×4 InP-based optical switch is reported. The device is quite simple and full device operation is achieved by injecting electrical currents to two electrodes. Since the operation of the switch relies on current spreading, using the carrier-induced refractive index change in InGaAsP multiple quantum wells, an area-selective zinc in-diffusion process is used to regulate the current spreading and optimize device performance. As a result, the fabricated 1×4 switch exhibits a −14 dB crosstalk between channels over a wavelength range of 30 nm, while maintaining low electrical power consumption and allowing the switch to be operated uncooled and under d.c. current conditions.

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