Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
546592 | Microelectronics Journal | 2008 | 4 Pages |
Abstract
We report on the experimental demonstration of a four-dot cell on a GaAs/AlGaAs substrate fabricated using electron beam lithographically defined gates. These surface metallic gates form a pair of double quantum dots, as well as a pair of quantum point contacts that act as non-invasive voltage probes. This device is used to realize a quantum cellular automata cell and, in further experiments, we employ it to investigate photon assisted tunneling. These results prove that the four-dot cell is a good building block candidate toward fulfilling the scalability DiVincezo criteria.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
F. Perez-Martinez, K.D. Petersson, I. Farrer, D. Anderson, G.A.C. Jones, D.A. Ritchie, C.G. Smith,