Photoluminescence studies from micropillars fabricated on IV–VI multiple quantum-well semiconductor structure

Micropillars were fabricated on multiple quantum-well structure of PbSe/PbSrSe grown on top of BaF2 substrate in molecular beam epitaxy (MBE). The photoluminescence spectra from the pillar structure, having a diameter of 5 μm and inter-pillar distance of 8 μm, was studied at various temperature starting from 77 to 300 K. There had been an approximately consistent red-shift of photoluminescence peak of ∼3.62 cm−1 for unit K change in ambient temperature. The prominent and repeatable emission from the micropillars at various temperatures signified high crystalline nature of the fabricated micro-objects. This type of micropillar structure is one of the magnificent contenders of future opto-electronic micro-features.