| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 546623 | Microelectronics Journal | 2007 | 5 Pages |
Abstract
Theoretical analysis of potential distribution in the interdigital-gated high electron mobility transistor (HEMT) plasma wave device was carried out. The dc I–V characteristics of capacitively coupled interdigital structure showed that uniformity of electric field under the interdigital gates was improved compared to the dc-connected interdigital gate structure. Admittance measurements of capacitively coupled interdigital gate structure in the microwave region of 10–40 GHz showed the conductance modulation by drain–source voltage. These results indicate the existence of plasma wave interactions.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Abdul Manaf Hashim, Seiya Kasai, Kouichi Iizuka, Tamotsu Hashizume, Hideki Hasegawa,