Simulation and experimental results on the forward J–V characteristic of Al implanted 4H–SiC p–i–n diodes

In this work the forward J–V characteristics of 4H–SiC p–i–n diodes are analysed by means of a physics based device simulator tuned by comparison to experimental results. The circular devices have a diameter of 350 μm. The implanted anode region showed a plateau aluminium concentration of 6×1019 cm−3 located at the surface with a profile edge located at 0.2 μm and a profile tail crossing the n-type epilayer doping at 1.35 μm. Al atom ionization efficiency was carefully taken into account during the simulations. The final devices showed good rectifying properties and at room temperature a diode current density close to 370 A/cm2 could be measured at 5 V. The simulation results were in good agreement with the experimental data taken at temperatures up to about 523 K in the whole explored current range extending over nine orders of magnitude. Simulations also allowed to estimate the effect of a different p+ doping electrically effective profile on the device current handling capabilities.