Carriers temperature for an operating silicon p–n junction

An analytic expression is introduced to describe the dependence of the carriers temperature with the lattice temperature. An experimental study of the temperature dependence of silicon junction characteristics leads to an experimental determination of the carriers temperature. An average error of 2.5% between the experimental values and the calculated values is obtained. The introduction of the carriers temperature is used to study the temperature dependence of the energy gap and to determine the value of the energy bandgap at 0 K. The carriers temperature is efficient to use in studying optoelectronic properties of silicon devices.