Two-dimensional numerical modeling of lightly doped nano-scale double-gate MOSFET

A two-dimensional numerical solution of electrostatic potential and electric field profiles are presented for lightly doped nano-scale Double-Gate Metal-Oxide-Semiconductor-Field-Effect-Transistor (DG-MOSFET). We have developed quasi-static (QS) model for evaluating bulk and inversion charges based on symmetric linearization model. We have also shown the non-quasi-static (NQS) effect on the charge due to a time varying gate voltage. It is seen that various symmetries of DG-MOSFET characteristics with respect to source/drain interchange is maintained in quasi-static as well as non-quasi-static version of the symmetrically linearized model. The variation of the threshold voltage with the varying width of the device is evaluated and presented. The results have been compared and contrasted with reported analytical model for QS condition for the purpose of verification of the model. The variation of threshold voltage along the width of the device is also predicted. This numerical model can be extended to analyze the transport phenomenon in sub 30 nm channel length DG-MOSFETs.