| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 546735 | Microelectronics Reliability | 2015 | 6 Pages |
•Electrical stress causes degradation in power MOSFETs parameters.•Degraded power MOSFET effects the switching applications.•Change in on-state resistance of power MOSFET is modeled.•A simple and accurate degraded power MOSFET model is proposed for switching applications.
In this paper, we proposed a simple and accurate degraded power MOSFET model for digital applications. The model provides to determine the electrical stress induced changes in power MOSFET switching characteristics. To establish the degraded power MOSFET and stress induced changes in switching parameters relation we consider the on-state-resistance of the power MOSFET as a voltage controlled resistor. We implemented a voltage non-linearly dependent resistor model in Pspice. We compared the experimental and simulation results to explore the model capability.
