Total-ionizing-dose effects and reliability of carbon nanotube FET devices

•Relative stability is observed during constant-voltage stress for carbon nanotube field effect transistors.•We report irradiation/post-rad annealing under positive gate bias induces more degradation.•The degradation after 10-keV X-ray irradiation depends on bias.•Cycling of the on/off state leads to significant degradation in the memory window.

Electrical stress and 10-keV X-ray irradiation and annealing responses are evaluated for carbon nanotube field effect transistors for nonvolatile memory applications. Less than 3% change in the drain current is observed during constant-voltage stress. Irradiation and annealing under positive gate bias induces more degradation in both drain current and memory window than under negative bias. Cycling of the on/off state leads to significant degradation in the memory window.