| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 546986 | Microelectronics Reliability | 2012 | 7 Pages |
In this article, we report the effect of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors (SHBTs) based on the simulation with the extracted model parameters from experiment data before irradiation, after irradiation and after annealing. A simplified Vertical Bipolar Inter-Company (VBIC) static model is proposed to study the operational mechanism and the DC characteristics of SHBTs. The results show that the defects induced by irradiation are responsible for the changes on the DC characteristics of the devices.
► We propose a simplified VBIC static model to describe the DC characteristics of InGaP/GaAs SHBTs. ► The extracted model parameters are used to study the degradation of devices performance after gamma irradiation. ► The radiation induced defects are mainly located in the BE-SCR and the BC-SCR. ► The defects in the base–collector junction may mainly consist of slow interface states.
